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100
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10
instantaneous Fonlvard Current (A)
0.010.1 0.2 0.3 04 0.5 0.6 0.7 08 0.9 1.0 1.1 12Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Fonlvard Characteristics
10 000
HA)1000
100
a
instantaneous Reverse Current
53
0.01
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS In inches (minimeters)
DO-201AD
Revision: 31-Oct-12
0 21015.3)0 19014.8)DIA.
0 05211 32)0 04311 22)DlA. \a‘
3For technical questions within your region: Diode§Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.ccm
SB5H90, SB5H100
Vishay General Semiconductor
100
Transient Thermal impedance (“C/W)
E
t V Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
100
Junction Capacitance (pF)
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
7
10125.4)MIN.
HM?t
0.375 9.50.285172)
10125.4)MIN.
l
lk
Document Number: 88722
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